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 X04 Series
SENSITIVE
4A SCRS
MAIN FEATURES:
Symbol IT(RMS) V DRM/VRRM IGT Value 4 600 and 800 50 to 200 Unit A V A
DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies...
TO202-3 (X04xxF)
ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) Parameter RMS on-state current (180 conduction angle) Tl = 60C Tamb = 25C IT(AV) Average on-state current (180 conduction angle) Tl = 60C Tamb = 25C ITSM Non repetitive surge peak on-state current I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
Value 4 1.35 2.5 0.9 33 Tj = 25C tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 s Tj = 25C Tj = 125C Tj = 125C Tj = 125C 30 4.5 50 1.2 0.2 - 40 to + 150 - 40 to + 125
Unit A
A
tp = 8.3 ms
A
It dI/dt IGM PG(AV) Tstg Tj
A 2S A/s A W C
September 2000 - Ed: 3
1/5
X04 Series
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol Test Conditions 02 IGT VD = 12 V VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IRG = 10 A IT = 50mA IG = 1mA RGK = 1k RGK = 1k RGK = 1k Tj = 110C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C RL = 3.3 k RGK = 1 k Tj = 125C RL = 140 MIN. MAX. MAX. MIN. MIN. MAX. MIN. MIN. MAX. MAX. MAX. MAX. 10 1.8 0.95 100 5 1 _ 200 0.8 0.1 8 5 6 15 X04xx 05 20 50 A V V V mA mA V/s V V m A mA Unit
VD = 67% VDRM ITM = 8 A
tp = 380 s
Threshold voltage Dynamic resistance VDRM = VRRM RGK = 1 k
THERMAL RESISTANCES
Symbol Rth(j-l) Rth(j-a) Junction to leads (DC) Junction to ambient (DC) Parameter Value 15 100 Unit C/W
PRODUCT SELECTOR
Voltage Part Number 600 V X0402MF X0402NF X0405MF X0405NF X X X X 800 V 200 A 200 A 50 A 50 A TO202-3 TO202-3 TO202-3 TO202-3 Sensitivity Package
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X04 Series
ORDERING INFORMATION
OTHER INFORMATION
Part Number X04xxyF 1AA2 X04xxyF 0AA2 Marking X04xxyF X04xxyF Weight 0.8 g 0.8 g Base Quantity 250 50 Packing mode Bulk Tube
Note: xx = sensitivity, y = voltage
Fig. 1: Maximum average power dissipation versus average on-state current.
Fig. 2-1: Average and D.C. on-state current versus lead temperature.
Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout).
Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration.
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X04 Series
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values).
Fig. 8: Surge peak on-state current versus number of cycles.
Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of It.
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X04 Series
Fig. 10: On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA TO202-3 (Plastic)
DIMENSIONS REF. Millimeters Min. A C D F H J M N N1 O P Typ. 7.3 10.5 1.5 0.51 1.5 4.5 5.3 2.54 1.4 0.7 0.100 0.055 0.028 0.020 0.059 0.177 0.209 Max. 10.1 0.287 0.413 0.059 Min. Inches Typ. Max. 0.398
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com
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